Semiconductor Informations
Search 2SK1007 Datasheet (PDF)
Fuji
2SK1007-01
Power Field-Effect Transistor, 5A I(D), 450V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
DatasheetPowered by Octopart |
[ Descriptions ]
| 2SK1007-01 Fuji Electric - N-CHANNEL SILICON POWER MOSFET |
| 2SK1007 Inchange Semiconductor - N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1007 DESCRIPTION ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS |
Related Information
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
Related Part Number
2SC1623 | 2SA814 |2SD880Y | 2SC3402 |
2SC2655 | 2SC2027 |