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Fuji
2SK1089
Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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[ Descriptions ]
| 2SK1089 Fuji Electric - N-channel MOS-FET 2SK1089 F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,035Ω 35A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Sour |
| 2SK1089 New Jersey Semiconductor - Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-3P |
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