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2SK1158
Power Field-Effect Transistor, 7A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 900 | 182.6395 | Visit Site | ||
| Semicontronic | 2,452 | 0.9 | Visit Site | ||
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File Download: 2SK1158.PDF
[ Descriptions ]
| 2SK1158 Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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