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2SK1164
Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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File Download: 2SK1164.PDF
[ Descriptions ]
| 2SK1164 Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1163, 2SK1164 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1163, 2SK1164 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1163 2SK1164 Ga |
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