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Renesas
2SK1169
Power Field-Effect Transistor, 20A I(D), 0.25ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| CoreStaff | 27 | 17.035 | Visit Site | ||
| Classic Components | 28 | Visit Site | |||
| GreenTree Electronics | 10 | Visit Site | |||
| UnikeyIC | 27 | Visit Site | |||
| Aztech | 383 | 14.9 | Visit Site | ||
| SHENGYU ELECTRONICS | 10,491 | 0.4594 | Visit Site | ||
| Unikeyic (ICkey) | 27 | Visit Site | |||
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File Download: 2SK1169.PDF
[ Descriptions ]
| 2SK1169 Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 Ga |
| 2SK1169 Renesas - Silicon N Channel MOS FET 2SK1169, 2SK1170 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3 |
Related Information
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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