Semiconductor Informations
Search 2SK125 Datasheet (PDF)
Panasonic
2SK1257
Power Field-Effect Transistor, 40A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| CoreStaff | 1,945 | 7.33 | Visit Site | ||
| UnikeyIC | 1,945 | Visit Site | |||
| Unikeyic (ICkey) | 1,945 | Visit Site | |||
| Win Source | 8,860 | Visit Site | |||
| Classic Components | 1,984 | Visit Site | |||
| Quest | 175 | 3.0915 | Visit Site | ||
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[ Descriptions ]
| 2SK1254 Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1254(L), 2SK1254(S) Absolute Maximum Ratings (Ta |
| 2SK1254L Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1254(L), 2SK1254(S) Absolute Maximum Ratings (Ta |
Related Information
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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