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Renesas
2SK1304
Power Field-Effect Transistor, 40A I(D), 0.04ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| SHENGYU ELECTRONICS | 11,543 | 0.4594 | Visit Site | ||
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File Download: 2SK1304.PDF
[ Descriptions ]
| 2SK1304 Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1304 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1304 Absolute Maximum Ratings (Ta = 25°C) Item Drain to |
| 2SK1304 Renesas - Silicon N Channel MOS FET 2SK1304 Silicon N Channel MOS FET REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO- |
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