Semiconductor Informations
Search 2SK1342 Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Microchip USA | 221 | 10408.228748068 | Visit Site | ||
| Component Stockers USA | 756 | 99.99 | Visit Site | ||
| Worldway Electronics | 26,390 | Visit Site | |||
| SHENGYU ELECTRONICS | 6,422 | 2.2971 | Visit Site | ||
| Anlinkda | 3,128 | 11.016 | Visit Site | ||
| Semicontronic | 2,684 | 1.34 | Visit Site | ||
| Heisener Electronics | 7,270 | Visit Site | |||
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File Download: 2SK1342.PDF
[ Descriptions ]
| 2SK1342 Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1342 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1342 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current |
| 2SK1342 Inchange Semiconductor - N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1342 DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-So |
Related Information
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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