Semiconductor Informations
| 2SK1925 Sanyo Semicon Device - N-Channel Silicon MOSFET Ordering number:ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=150ns). Package Dimensions unit:mm 2056A [2SK1925] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source |
| 2SK1925 Inchange Semiconductor - N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1925 DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Curre |
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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