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| 2SK1933 Hitachi Semiconductor - Silicon N-Channel MOS FET 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode |
| 2SK1933 Renesas - Silicon N Channel MOS FET 2SK1933 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27, 2006 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Apr 27, 2006 page 1 of 6 2 |
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