Semiconductor Informations

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| 2SK2415 NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) + 0.2 1.5 0.1 6.5 ± 0.2 2.3 ± 0.2 0.5 ± 0.1 FEATURES 1.6 ± 0.2 5.0 ± 0.2 4 RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) |
| 2SK2415-Z NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) + 0.2 1.5 0.1 6.5 ± 0.2 2.3 ± 0.2 0.5 ± 0.1 FEATURES 1.6 ± 0.2 5.0 ± 0.2 4 RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) |
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |