Semiconductor Informations

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| 2SK2570 Hitachi Semiconductor - Silicon N-Channel MOS FET Low Frequency Power Switching 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) 2.5V gate drive devices. Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak cur |
| 2SK2570 Renesas - Silicon N Channel MOS FET 2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Marking is “ZL ” Rev.2.00 Sep |
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |