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[ Descriptions ]

2SK2590 Hitachi Semiconductor - Silicon N-Channel MOS FET

2SK2590 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
2SK2590 Inchange Semiconductor - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2590 DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage I



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