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| 2SK2611 Toshiba Semiconductor - N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2611 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON-resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 1.2 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A |
| 2SK2611 WINSEMI SEMICONDUCTOR - Silicon N-Channel MOSFET www.t.in 2SK2611 Silicon N-Channel MOSFET Features 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state r |
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| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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