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Search 2SK2662 Datasheet (PDF)
Toshiba
2SK2662
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 2,880 | Visit Site | |||
| Anlinkda | 59,347 | 0.552 | Visit Site | ||
| RC Electronics | 53,319 | 0.4 | Visit Site | ||
| SHENGYU ELECTRONICS | 16,526 | 0.3369 | Visit Site | ||
| Run Hong Electronics | 6,836 | 0.4718 | Visit Site | ||
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File Download: 2SK2662.PDF
[ Descriptions ]
| 2SK2662 Toshiba Semiconductor - Silicon N Channel MOS Type Field Effect Transistor 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2662 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm - Low drain source ON resistance : RDS (ON) = 1.35 Ω (typ.) - High forward transfer admittance : |Yfs| = 4.0 S (typ.) - Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) - Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 |
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| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
Related Part Number
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