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| 2SK2800 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features Low on-resistance R DS(on) = 15 mΩ typ. High speed switching Low drive current 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to |
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