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2SK2828
Power Field-Effect Transistor, 12A I(D), 1.2ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET
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File Download: 2SK2828.PDF
[ Descriptions ]
| 2SK2828 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK2828 Silicon N Channel MOS FET High Speed Power Switching ADE-208-514 C (Z) 4th. Edition Feb 1999 Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC DC converter Avalanche ratings Outline TO 3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25°C) Item Drai |
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