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2SK2925STR-E
Nch Single Power Mosfet 60V 10A 80Mohm DPAK(S)/To-252
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[ Descriptions ]


2SK2925S Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features Low on-resistance R DS =0.060 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline DPAK 2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
2SK2925S Guangdong Kexin Industrial - N-Channel Silicon MOSFET

SMD Type N-Channel Silicon MOSFET 2SK2925S IC MOSFET Features Low on-resistance RDS =0.060 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching 4V gate drive device can be driven from 5V source +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.6


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