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2SK2933 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching

2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.040Ω typ. 4V gate drive devices. High speed switching Outline TO 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-



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