Semiconductor Informations
| 2SK2957 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features Low on-resistance R DS(on) = 7mΩ typ. 4V gate drive devices. High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source vol |
| 2SK2957L Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features Low on-resistance R DS(on) = 7mΩ typ. 4V gate drive devices. High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source vol |
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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