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2SK2973
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide...
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[ Descriptions ]
| 2SK2973 Mitsubishi Electric Semiconductor - RF POWER MOS FET(VHF/UHF power amplifiers) MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF, UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm High efficiency:55% typ. Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For driv |
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