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2SK2975 Mitsubishi Electric Semiconductor - RF POWER MOS FET(VHF/UHF power amplifiers)

MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF, UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm High efficiency:55% typ. Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50



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