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Search 2SK2975 Datasheet (PDF)
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| ICPartonline | 11,834 | 1.22 | Visit Site | ||
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| Anlinkda | 8,603 | 4.853 | Visit Site | ||
| RC Electronics | 7,715 | 3.52 | Visit Site | ||
| SHENGYU ELECTRONICS | 5,300 | 4.5941 | Visit Site | ||
| Run Hong Electronics | 5,068 | 5.3304 | Visit Site | ||
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File Download: 2SK2975.PDF
[ Descriptions ]
| 2SK2975 Mitsubishi Electric Semiconductor - RF POWER MOS FET(VHF/UHF power amplifiers) MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF, UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm High efficiency:55% typ. Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 |
Related Information
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| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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