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| 2SK2978 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A) Low drive current High speed switching 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to s |
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