Semiconductor Informations
| 2SK30ATM Toshiba Semiconductor - Silicon N Channel Junction Type Transistor 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Low noise: NF = 0.5 dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz) Absolute Maximum Rati |
| 2SK30A Xiaosheng - Silicon N-Cahannel FET Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: 2SK30A Gate Source Silicon N-Chinnel Junction FET Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic switch. Package example: Absolute Maximum Ratings (Ta=25℃) Parameter Gate to Drain voltage Gate to Source voltage Gate current Allowabl |
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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