Semiconductor Informations
Search 2SK3141 Datasheet (PDF)
Renesas
2SK3141
Power Field-Effect Transistor, 75A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
DatasheetPowered by Octopart |
File Download: 2SK3141.PDF
[ Descriptions ]
| 2SK3141 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B (Z) 3rd. Edition February 1999 Features Low on-resistance R DS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3141 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Dra |
| 2SK3141 Renesas - Silicon N-Channel MOS FET 2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1070-0400 (Previous: ADE-208-680B) Rev.4.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4.00 Sep 07, 2005 page 1 of 7 |
Related Information
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
Related Part Number
2SC1623 | 2SA814 |2SD880Y | 2SC3402 |
2SC2655 | 2SC2027 |