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| 2SK3148 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK3148 Silicon N Channel MOS FET High Speed Power Switching ADE-208-748A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3148 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain curre |
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