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[ Descriptions ]
| 2SK3151 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3151 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sour |
| 2SK3151 Renesas - Silicon N Channel MOS FET 2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page |
Related Information
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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