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| 2SK3157 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK3157 Silicon N Channel MOS FET High Speed Power Switching ADE-208-769A (Z) 2nd. Edition Februaty 1999 Features Low on-resistance R DS = 50 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3157 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain curre |
| 2SK3157 Renesas - Silicon N Channel MOS FET 2SK3157 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS = 50 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline REJ03G1082-0300 (Previous: ADE-208-769A) Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.3.00 Sep 07, 2005 page 1 of 7 2SK315 |
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| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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