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Renesas
2SK3158
Power Field-Effect Transistor, 30A I(D), 150V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
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|---|---|---|---|---|---|
| SHENGYU ELECTRONICS | 13,851 | 0.3063 | Visit Site | ||
| Anlinkda | 8,303 | 6.673 | Visit Site | ||
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File Download: 2SK3158.PDF
[ Descriptions ]
| 2SK3158 Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching 2SK3158 Silicon N Channel MOS FET High Speed Power Switching ADE-208-757A(Z) Target Specification 2nd. Edition December 1998 Features Low on-resistance R DS =35mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to so |
| 2SK3158 Renesas - Silicon N Channel MOS FET 2SK3158 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS = 40 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G1083-0400 (Previous: ADE-208-757B) Target Specification Rev.4.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4.00 Sep 07, |
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