Semiconductor Informations

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| 2SK330 Toshiba Semiconductor - Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK330 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 mA) Complementary to 2SJ105 Small package Absolute Maximum Ratings (Ta = |
| 2SK3301 Toshiba Semiconductor - Silicon N Channel MOS Type Field Effect Transistor 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum |
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |