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Toshiba
2SK3320-BL(TE85L,F
200mW 200mW 200mV@ 100 nA 1individualNChannel 10V 6mA 6mA double 13pF@10V USV-5 SMD mount
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[ Descriptions ]


2SK330 Toshiba Semiconductor - Silicon N Channel Junction Type Transistor

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK330 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 mA) Complementary to 2SJ105 Small package Absolute Maximum Ratings (Ta =
2SK3301 Toshiba Semiconductor - Silicon N Channel MOS Type Field Effect Transistor

2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum


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2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor

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