Semiconductor Informations
| 2SK435 Hitachi Semiconductor - Silicon N-Channel Junction FET 2SK435 Silicon N-Channel Junction FET Application Low frequency , High frequency amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK435 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IG Pch Tch Tstg Ratings 22 22 100 10 300 15 |
| 2SK436 Sanyo Semicon Device - N-Channel Junction Silicon FET Ordering number:EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AM tuner RF amplifiers and low-noise amplifiers. unit:mm Features · Large yfs . · Ultralow noise figure. · Small Crss. · Ultrasmall-sized package permitting 2SK436-applied sets to be made small and slim. 2050A 0.4 3 [2SK4 |
| 2SK0065 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu |
| 2SK0123 Silicon N-Channel Junction FET - Panasonic Semiconductor Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0 |
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