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Search 30J324 Datasheet (PDF)
Toshiba
GT30J324
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 4,000 | Visit Site | |||
| Worldway Electronics | 22,723 | Visit Site | |||
| SHENGYU ELECTRONICS | 12,812 | 0.9188 | Visit Site | ||
| Anlinkda | 7,576 | 8.05 | Visit Site | ||
| RC Electronics | 6,793 | 5.84 | Visit Site | ||
| Quest | 2,402 | 8.1 | Visit Site | ||
| Run Hong Electronics | 2,126 | 3.4765 | Visit Site | ||
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[ Descriptions ]
| 30J324 Toshiba Semiconductor - GT30J324 GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kH- (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) · Low saturation voltage: VCE (sat |
Related Information
| 30J127 600V, 200A, IGBT for PDF-TV - Toshiba Semiconductor |
| 30J324 GT30J324 - Toshiba Semiconductor GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kH- (reference) High speed: tf = 0.05 s (typ.) |
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