Semiconductor Informations

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| 33N25 Fairchild Semiconductor - FDB33N25 FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, plana |
| 33N25T Fairchild - 250V, 33A, N-Channel MOSFET ( FDPF33N25T ) |
| 33N25 FDB33N25 - Fairchild Semiconductor FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel |
| 33N25T 250V, 33A, N-Channel MOSFET ( FDPF33N25T ) - Fairchild |