Semiconductor Informations

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| 3DD13003 Jiangsu Changjiang Electronics - TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 FEATURES TRANSISTOR ( NPN ) TO-220 1. BASE 2. COLLECTOR 3. EMITTER · power switching applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous |
| 3DD13003 TRANSYS Electronics - Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13003 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-220 1. BASE aShe 1.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown volt |
| 3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th |
| 3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. |