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HXY MOSFET
3DD13003
0.6V @ IC=1A, Ib= 250 Ma NPN 400V 1.5A TO-252
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3DD13003 Jiangsu Changjiang Electronics - TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 FEATURES TRANSISTOR ( NPN ) TO-220 1. BASE 2. COLLECTOR 3. EMITTER · power switching applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
3DD13003 TRANSYS Electronics - Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13003 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-220 1. BASE aShe 1.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown volt


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