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| 3DD5011 JILIN SINO-MICROELECTRONICS - CASE-RATED BIPOLAR TRANSISTOR 低 放大管 定的 型晶 管 CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 主要 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.3 μs(max) 用途 - 彩色 机 源 路 APPLICATIONS - Switching power supply for color TV. 封 Package TO-3P(H)IS 品特性 FEATURES 123 z3DD5011 是 NPN 型 - 3DD5011 is high breakdown 高反 大 |
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| 3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th |
| 3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. |
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