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[ Descriptions ]

3DU5C ETC - Metal Encapsulated Silicon Phototransistor

3DU5C Metal Encapsulated Silicon Phototransistor Dimension Specification NPN Silicon Phototransistor;Model : 3DU5C Working Voltage(Max.) : 10V; Reverse Breakdown Voltage : 15V; Dark Current : 0.3uA Photocurrent : 0.5-1mA; Power Consumption : 30mW; Peak Wavelength : 880nM Body Size : 7 x 5mm, 0.28" x 0.2"(L*D); Total Length : 28mm, 1.1"; External Material : Metal Weight : 3g;


Related Information

3DU5C Metal Encapsulated Silicon Phototransistor - ETC

3DU5C Metal Encapsulated Silicon Phototransistor Dimension Specification NPN Silicon Phototransistor;Model : 3DU5C Working Voltage(Max.) : 10V; Reverse Breakdown Voltage : 15V; Dark Current : 0.3uA Photocurrent : 0.5-1mA; Power Consumption : 30mW; Peak Wavelength : 880nM Body Size : 7 x 5mm,



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