Semiconductor Informations
| 40N60 IXYS Corporation - IXSH40N60 VCES Low VCE(sat) IGBT High Speed IGBT IXSH, IXSM 40 N60 IXSH, IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = |
| 40N60NPFD Silan - 40A, 600V FIELD STOP IGBT ( SGT40N60NPFDPN ) |
| 40N03GP N-channel Enhancement-mode Power MOSFET - Advanced Power Electronics Advanced Power Electronics Corp. AP40N03GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge D Fast Switching Performance RoHS-compliant, halogen-free G S BV DSS RDS(ON) ID 30V 17mΩ 40A Description Advanced Power MOSFETs from APEC provide the designer |
| 40N03P SSM40N03P - Silicon Standard SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDSS R DS(ON) ID TO-220 30V 17mΩ 40A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low |