Semiconductor Informations

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| 4N29 Motorola Inc - STANDARD THRU HOLE CASE 730A-04 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29, D 6-Pin DIP Optoisolators Darlington Output The 4N29, A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input current |
| 4N29 Toshiba Semiconductor - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) |
| 4N22 JAN/ JANTX/ JANTXV/ SINGLE CHANNEL OPTOCOUPLERS - Micropac Industries 4N22 4N23 4N24 JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS Mii OPTOELECTRONIC PRODUCTS DIVISION Features: Overall current gain...1.5 typical (4N24) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation Applicat |
| 4N22A JAN/ JANTX/ JANTXV/ SINGLE CHANNEL OPTOCOUPLERS - Micropac Industries 4N22A 4N23A 4N24A JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS Mii OPTOELECTRONIC PRODUCTS DIVISION Features: Collector is electrically isolated from the case. Overall current gain...1.5 typical (4N24A) Base lead provided for conventional transistor biasing Rugged package High gain, high |