Semiconductor Informations
Search 4N60B Datasheet (PDF)
Littelfuse
IXGT64N60B3-TRL
Insulated Gate Bipolar Transistor, 64A I(C), 600V V(BR)CES, N-Channel, TO-268AA
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Worldway Electronics | 20,659 | Visit Site | |||
Powered by Octopart | |||||
[ Descriptions ]
| 4N60B angstrem - N-Chanel Power MOSFET N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC Features Low Qg Low Rdson RoHS compliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N60B ANI4N60B ANU4N60B Marking A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK |
| 4N60B Fairchild Semiconductor - 600V N-Channel MOSFET SSP4N60B, SSS4N60B SSP4N60B, SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and comm |
Related Information
| 4N60 N-CHANNEL MOSFET - KIA KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 1.Description The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually use |
| 4N60 N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 4N60 4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This |
Related Part Number
4N25 | 4N35 |4N04R7 | 4N29 |
4N25 | 4NF20L |