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| 50N06 ETC - Low voltage high current power MOS FET 50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ 特性 (TC=25ºC) 明 漏源反向 漏源截止 流 源截止 流 通 阻 源 跨 符 BVDSS IDSS IGSS(F, R) RDS(ON) VGS(th) gFS 件 VGS=0V, ID=250uA VDS=60v,VGS=0V VGS=±20V,VDS=0V VGS=10V,ID=26.2A VGS=5V,I |
| 50N06 Unisonic Technologies - N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power applianc |
Related Information
| 50N06 N-CHANNEL MOSFET - CHONGQING PINGYANG 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V, 25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv, dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherw |
| 50N06 N-Channel MOSFET Transistor - Inchange Semiconductor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N06 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAM |
Related Part Number
50N60 | 500765RT |50FXFH13 | 50JR22 |
50C02CH | 50RIA80M |