Semiconductor Informations

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| 7N60 Unisonic Technologies - N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 7N60 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and ad |
| 7N60B IXYS Corporation - Hiperfast (tm) Igbt HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 300 H TC = 25°C Maximum Ratings |
| 7N60 N-CHANNEL MOSFET - CHONGQING PINGYANG 7N60(F,B,H) 7A mps,600 Volts N-CHANNEL MOSFET FEATURE 7A,600V,RDS(ON)=1.2Ω@VGS=10V, 3.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv, dt capability TO-220AB 7N60 ITO-220AB 7N60F TO-263 7N60B TO-262 7N60H Absolute Maximum Ratings(TC=25℃,unless otherwise |
| 7N60 N-Channel Power MOSFET / Transistor - nELL SEMICONDUCTOR 7N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thres |