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UMW(Youtai Semiconductor Co., Ltd.)
8205A
830MW 12V ±12V 5.7NC@10V 2 N-ch 20V VGS=2.5V ID=3A 5A 630PF@10V SOT-23-6 Mosfet
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[ Descriptions ]

8205A RZC Microelectronics - Dual N-Channel MOSFET

8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . FEATURES l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A)
8205A HSMC - Dual N-Channel Enhancement-Mode MOSFET

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1, 4 8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L 8205A Symbol & Pin Assignment Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with


Related Information

8205A Dual N-Channel MOSFET - RZC Microelectronics

8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . FEATURES l VDS =2
8205A Dual N-Channel Enhancement-Mode MOSFET - HSMC

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1, 4 8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L 8205A Symbol & Pin Assignment Description This N-Channel 2.5V specified MOSFET is a rugged ga



Related Part Number

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