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A1013 Shanghai - Silicon PNP Epitaxial Transistor

A1013 A1013 Silicon PNP Epitaxial Transistor Description :The A1013 is designed for color TV class B sound output applications Features: ●High voltage: VCEO=160V ●Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×260um Al Au 60um 6 inch Electrical C

A1013 Toshiba Semiconductor - PNP Transistor - 2SA1013

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2SA1013 Unit: mm High voltage: VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TV. Complementary to 2SC2383. Maximum Ratings (Ta = 25°C) Charac

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A1002 Silicon PNP Power Transistor - INCHANGE

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

A1002 PNP Transistor - 2SA1002 - New Jersey Semiconductor

crTVf 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , line. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1002 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- :V(BR)cEO=-120V(Min.) APPLICATIONS Designed for audio an

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