Semiconductor Informations
| A1023 FGX - PNP Transistor --APPLICATION: High Voltage Applications. --MAXIMUM RATINGS(Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO -120 V VCEO -120 V VEBO -5 V IC -800 mA PC 1 W TJ 150 ℃ Tstg -55~150 ℃ A1023 PNP silicon 1 TO-92L 1. Emit |
| A10 Processor - Allwinner Technology Allwinner Technology CO., Ltd. A10 Datasheet V1.70 December 27, 2012 Allwinner Technology CO., Ltd. Revision History Version V1.00 V1.10 V1.20 V1.21 V1.30 V1.40 V1.50 V1.60 V1.70 Date 2011.08.22 2012.02.17 2012.03.29 2012.04.06 2012.08.24 2012.09.14 2012.10.18 2012.10.25 2012.12.27 Author Desc |
| A1002 Silicon PNP Power Transistor - INCHANGE INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=2 |