Semiconductor Informations
File Download: A1350.PDF
A1350 Hitachi Semiconductor - PNP Transistor - 2SA1350 2SA1350 Silicon PNP Epitaxial Application Low frequency low noise amplifier HF amplefier Outline SPAK 12 3 1. Emitter 2. Collector 3. Base 2SA1350 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg |
A1300 PNP Transistor - 2SA1300 - Toshiba Semiconductor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 |
A1301 Continuous-Time Ratiometric Linear Hall Effect Sensor ICs - Allegro MicroSystems A1301 and A1302 Continuous-Time Ratiometric Linear Hall Effect Sensor ICs FEATURES AND BENEFITS Low-noise output Fast power-on time Ratiometric rail-to-rail output 4.5 to 6.0 V operation Solid-state reliability Factory-programmed at end-of-line for optimum performance Robust ES |
Please enter the part number you wish to download in the search bar above.