Semiconductor Informations
A1930 Toshiba Semiconductor - PNP Transistor - 2SA1930 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: fT = 200 MH- (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ju |
A19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER - Tyco A19-1, SMA19-1 10 TO 1000 MH- CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22.5 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11, 00)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness ( |
A190-3A-00 Touch Panel - atouch |
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