Semiconductor Informations
| A1941 Toshiba Semiconductor - PNP Transistor - 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage |
| A1941 CDIL - Power Transistor Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 C5198 (9TW) (9TW) PNP NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise ) VALUE DESCRIPTION SYMBOL VCBO 160 Collector Base Voltage V 160 Collector Emitter Voltage CEO VEBO 5.0 Emitter Base Voltag |
| A19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER - Tyco A19-1, SMA19-1 10 TO 1000 MH- CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22.5 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11, 00)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness ( |
| A190-3A-00 Touch Panel - atouch |