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Siemens
3RA1972-2A
SIEMENS 3RA1972-2A Base plate for mounting of combination of two contactors 2x
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A1972 Toshiba Semiconductor - PNP Transistor - 2SA1972

2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Sym


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A19-1, SMA19-1 10 TO 1000 MH- CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22.5 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11, 00)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (
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