Semiconductor Informations
| A1972 Toshiba Semiconductor - PNP Transistor - 2SA1972 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Sym |
| A19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER - Tyco A19-1, SMA19-1 10 TO 1000 MH- CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22.5 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11, 00)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness ( |
| A190-3A-00 Touch Panel - atouch |