Semiconductor Informations
| A1SHB TOPSKY - P-Channel Power MOSFE P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook comput |
| A1SHB YANGJING - P-Channel 20-V(D-S) MOSFET SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS - Load Switch for Portable Devices - DC, DC Converter MARKING: A11 SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren |
| A1SHB P-Channel Power MOSFE - TOPSKY P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These de |
| A1SHB P-Channel 20-V(D-S) MOSFET - YANGJING SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS - Load Switch for Portable Devices - DC, DC Converter MARKING: A11 SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless o |
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