Semiconductor Informations

File Download: A614.PDF
| A614 FGX - Low Frequency Power Amplifier · ¹ Ð ¼¼ × --APPLICATION:Low Frequency Power Amplifier. A614 PNP silicon Power Regulator --MAXIMUM RATINGS(Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -80 -55 -5 -3.0 25 150 V V V A W â |
| A614 INCHANGE - PNP Transistor - 2SA614 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VC |
| A614 Low Frequency Power Amplifier - FGX · ¹ Ð ¼¼ × --APPLICATION:Low Frequency Power Amplifier. A614 PNP silicon Power Regulator --MAXIMUM RATINGS(Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temp |
| A614 PNP Transistor - 2SA614 - INCHANGE INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATION |